Electroreflectance of porous layers obtained by stain etching of laser modified silicon-Reference-Cited by-同舟云学术

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Electroreflectance of porous layers obtained by stain etching of laser modified silicon

Published:2000-10-31 Issue:22 Volume:33 Page:2875-2879
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Holiney R Yu,Fedorenko L L,Matveeva L A,Strilchenko I Yu,Venger E F,Yusupov N M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/33/i=22/a=302/pdf

Reference33 articles.

1. The structural and luminescence properties of porous silicon

2. The mechanism of light emission from porous silicon: where are we 7 years on?

3. Visible luminescence from silicon quantum dots and wells

4. Photoluminescence and EPR studies of porous silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large enhancement of the Hall mobility of the majority carrier in p-type Czochralski silicon after porous silicon damage: solutions for gettering efficiency improvement;Semiconductor Science and Technology;2007-03-09

2. The influence of hydrogen plasma on the electroreflectance spectrum and the spectrum of electron states of porous silicon;Semiconductors;2003-01

3. Direct Transition in the Porous Nanosilicon Measured by Electroreflectance;Frontiers of Multifunctional Nanosystems;2002

4. Influence of neutron irradiation on elctrooptical and structural properties of silicon;Semiconductor Physics, Quantum Electronics and Optoelectronics;2001-07-13

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