Diffusion length evaluation of boron-implanted silicon using the SEM-EBIC/Schottky diode technique
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/12/i=8/a=014/pdf
Reference7 articles.
1. Irradiation defects and the electrical quality of ion implanted silicon
2. SEM observation of dislocations in boron implanted silicon using schottky barrier EBIC technique
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