Electronic structure of the activating layer in III-V:Cs-O negative-electron-affinity photoemitters
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/8/i=5/a=013/pdf
Reference47 articles.
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2. Thermionic and Semiconducting Properties of [Ag]–Cs2O, Ag, Cs
3. Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
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