Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics-Reference-Cited by-同舟云学术

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Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

Published:2010-11-02 Issue:46 Volume:43 Page:465102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kim Se Hyun,Yun Won Min,Kwon Oh-Kwan,Hong Kipyo,Yang Chanwoo,Choi Woon-Seop,Park Chan Eon

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Jet printing flexible displays

2. Low-voltage organic transistors with an amorphous molecular gate dielectric

3. High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators

4. A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches

5. High-Performance OTFTs Using Surface-Modified Alumina Dielectrics

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