The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour deposition-Reference-Cited by-同舟云学术

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The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour deposition

Published:2000-12-21 Issue:2 Volume:34 Page:155-159
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Ding Shi-Jin,Wang Peng-Fei,Zhang David Wei,Wang Ji-Tao,Lee Wei William

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/34/i=2/a=302/pdf

Reference31 articles.

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2. Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane

3. Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

4. Deposition of amorphous fluoropolymers thin films by laser ablation

5. Silica Aerogel: An Intrinsically Low Dielectric Constant Material

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1. Adhesion enhancement of hard coatings deposited on flexible plastic substrates using an interfacial buffer layer;Journal of Physics D: Applied Physics;2010-04-15

2. Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al 2 O 3 Ultra-Thin Film on Si Substrate;Chinese Physics Letters;2005-08-25

3. Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor I: Deposition, morphology, structural and chemical properties;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-01

4. Chemical bonding of magnetron-sputtered copper on PECVD amorphous SiCOF film;Applied Surface Science;2003-02

5. Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits;Chinese Physics Letters;2002-05-28

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