Band offsets at heavily strained III - V interfaces-Reference-Cited by-同舟云学术

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Band offsets at heavily strained III - V interfaces

Published:1997-05-21 Issue:10 Volume:30 Page:1436-1441
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Ohler C,Förster A,Moers J,Daniels C,Lüth H

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/30/i=10/a=008/pdf

Reference30 articles.

1. Strained‐layer superlattices from lattice mismatched materials

2. Valence band engineering in strained-layer structures

3. Acoustic deformation potentials and heterostructure band offsets in semiconductors

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