Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics-Reference-Cited by-同舟云学术

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Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

Published:2014-02-12 Issue:9 Volume:47 Page:094003
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Tsukagoshi K,Li S-L,Miyazaki H,Aparecido-Ferreira A,Nakaharai S

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=9/a=094003/pdf

Reference72 articles.

1. Limits on Silicon Nanoelectronics for Terascale Integration

2. Carrier Transport in Two-Dimensional Graphene Layers

3. Ultrahigh electron mobility in suspended graphene

4. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

5. Approaching ballistic transport in suspended graphene

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1. Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+ of ion-conducting-oxide gate dielectric;AIP Advances;2020-08-01

2. Probing carrier concentration in gated single, bi- and tri-layer CVD graphene using Raman spectroscopy;Carbon;2019-08

3. Measurement of surface conductivity of graphene at W‐band;Microwave and Optical Technology Letters;2019-03-13

4. Surface conductance of graphene from non-contact resonant cavity;Measurement;2016-06

5. Electronic and optical properties of graphene nanoribbons in external fields;Physical Chemistry Chemical Physics;2016

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