A generalized transport equation for ion implantation into infinite targets
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/27/i=12/a=021/pdf
Reference12 articles.
1. Monte Carlo simulation of ion beam penetration in solids
2. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
3. Spatial distribution of ions incident on solid target as a function of instantaneous energy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Generating ion implantation profiles in one and two dimensions. 2: depth-dependent moments and line-source responses;Journal of Physics D: Applied Physics;1996-05-14
2. Generating ion implantation profiles in one and two dimensions. 1: density functions;Journal of Physics D: Applied Physics;1996-05-14
3. How will physics be involved in silicon microelectronics;Journal of Physics D: Applied Physics;1996-03-14
4. The derivation and moments solution of approximate transport equations for the implantation of ions into amorphous targets;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-06
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