Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glasses
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/27/i=12/a=025/pdf
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1. Amorphous semiconductors for switching, memory, and imaging applications
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3. Some properties of Sb2Te3−xSex for nonvolatile memory based on phase transition
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