Oxygen vacancy andEC− 1 eV electron trap in ZnO-Reference-Cited by-同舟云学术

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Oxygen vacancy andEC− 1 eV electron trap in ZnO

Published:2014-10-31 Issue:46 Volume:47 Page:465103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chicot Gauthier,Muret Pierre,Santailler Jean-Louis,Feuillet Guy,Pernot Julien

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=46/a=465103/pdf

Reference38 articles.

1. Oxygen vacancies in ZnO

2. First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects

3. Native point defects in ZnO

4. Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

5. Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

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