Calculated and measured infrared reflectivity of diffused/implanted p-type silicon layers
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/16/i=8/a=021/pdf
Reference16 articles.
1. Infrared Reflectivity of N on N+Si Wafers
2. Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
3. Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystals
4. Optical constants of various heavily doped p- and n-type silicon crystals obtained by Kramers-Kronig analysis
5. On the Optically Determined Relaxation Time of Heavily Doped p-Type Silicon
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