Epitaxial growth and resistive switching properties of BaTiO3on (0 0 1) Si by RF sputtering
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=24/a=245301/pdf
Reference13 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. Critical thickness of ultrathin ferroelectric BaTiO3 films
3. The influence of an extrinsic interfacial layer on the polarization of sputtered BaTiO3 film
4. Reproducible switching effect in thin oxide films for memory applications
5. Resistive hystersis effects in perovskite oxide-based heterostructure junctions
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2. Temperature-dependent space-charge-limited conduction in BaTiO3 heterojunctions;Journal of Materials Science;2017-12-18
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4. Effect of sweeping voltage and compliance current on bipolar resistive switching and white-light controlled Schottky behavior in epitaxial BaTiO 3 (111) thin films;Materials Science in Semiconductor Processing;2016-01
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