Role of hydroxyl groups in the formation of defect configurations in silicon devices-Reference-Cited by-同舟云学术

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Role of hydroxyl groups in the formation of defect configurations in silicon devices

Published:2008-12-03 Issue:24 Volume:41 Page:245407
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Ligatchev Valeri,Sim Li Yun,Ng Man-Fai,Xie Xian Ning,Yang Shuo-Wang

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=24/a=245407/pdf

Reference37 articles.

1. InitialH2O-induced Oxidation of Si(100)–(2×1)

2. Si(100)-(2×1) surface defects and dissociative and nondissociative adsorption ofH2O studied with scanning tunneling microscopy

3. Pathways for initial water-induced oxidation of Si(100)

4. Adsorption of water on Si(100)-(2×1): A study with density functional theory

5. Adsorption of Water on the Si(100) Surface: An Ab Initio and QM/MM Cluster Study

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-induced reversible surface modification and its impact on oxygen heterogeneous recombination;Journal of Physics D: Applied Physics;2023-10-25

2. Photoluminescence of oxygen vacancies and hydroxyl group surface functionalized SnO2 nanoparticles;Physical Chemistry Chemical Physics;2015

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