The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis-Reference-Cited by-同舟云学术

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The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

Published:2007-02-02 Issue:4 Volume:40 Page:1113-1117
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Wang X L,Zhao D G,Jahn U,Ploog K,Jiang D S,Yang H,Liang J W

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/40/i=4/a=031/pdf

Reference10 articles.

1. Solar-blind AlGaN photodiodes with very low cutoff wavelength

2. Solar-blind Al x Ga 1-x N p-i-n photodetectors grown on LEO and non-LEO GaN

3. Back illuminated AlGaN solar-blind photodetectors

4. High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

5. Solar-blind AlGaN-based inverted heterostructure photodiodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaN Epitaxial Technology;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

2. Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1−xN/AlN multi-buffer layers;Journal of Physics D: Applied Physics;2009-01-14

3. Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition;Journal of Crystal Growth;2008-12

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