Etching Mechanisms of CF3Etching Fluorinated Si: Molecular Dynamics Simulation
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Reference19 articles.
1. Mechanisms in Plasma-assisted Etching
2. Surface-science aspects of plasma-assisted etching
3. Surface science aspects of etching reactions
4. Beam study of the Si and SiO2 etching processes by energetic fluorocarbon ions
5. Dependence of SiO[sub 2] etch rate on sidewall angle as affected by bottom materials in a high-density CHF[sub 3] plasma
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