Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer-Reference-Cited by-同舟云学术

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Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer

Published:2014-06-17 Issue:8 Volume:11 Page:085002
ISSN:1612-2011
Container-title:Laser Physics Letters
language:
Short-container-title:Laser Phys. Lett.

Author:

Lin B C,Chang Y A,Chen K J,Chiu C H,Li Z Y,Lan Y P,Lin C C,Lee P T,Kuo Y K,Shih M H,Kuo H C,Lu T C,Wang S C

Publisher

IOP Publishing

Subject

Physics and Astronomy (miscellaneous),Instrumentation

Link

http://stacks.iop.org/1612-202X/11/i=8/a=085002/pdf

Reference27 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

5. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier;Semiconductor Science and Technology;2023-10-27

2. Effects of different current confinement layers in GaN-based VCSELs;AIP Advances;2023-07-01

3. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited];Chinese Optics Letters;2022

4. Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers;Chinese Journal of Lasers;2020

5. Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer;Micromachines;2019-10-12

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