DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2epitaxial films-Reference-Cited by-同舟云学术

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DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2epitaxial films

Published:2010-07-02 Issue:8 Volume:23 Page:082001
ISSN:0953-2048
Container-title:Superconductor Science and Technology
language:
Short-container-title:Supercond. Sci. Technol.

Author:

Katase Takayoshi,Ishimaru Yoshihiro,Tsukamoto Akira,Hiramatsu Hidenori,Kamiya Toshio,Tanabe Keiichi,Hosono Hideo

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Condensed Matter Physics,Ceramics and Composites

Reference31 articles.

1. Iron-Based Layered Superconductor: LaOFeP

2. Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K

3. Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

4. Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2with Bilayered FeAs Structures and their Magnetic Anisotropy

5. Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

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2. High-critical temperature iron-based superconductor epitaxial films for expanding the potential applications;Superconductor Science and Technology;2022-11-15

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4. Thin Film Studies Under Focus;Iron-Based Superconducting Thin Films;2021

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