Pressure effect on the electron mobility in AlAs/GaAs quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/12/035/pdf
Reference34 articles.
1. Dynamical Screening, Collective Excitations, and Electron–Phonon Interaction in Heterostructures and Semiconductor Quantum Wells. General Theory
2. Dynamical Screening, Collective Excitations, and Electron-Phonon Interaction in Heterostructures and Semiconductor Quantum Wells. Application to Double Heterostructures
3. Electron scattering by confined LO polar phonons in a quantum well
4. Polar-optic phonons and high-field electron transport in cylindrical GaAs/AlAs quantum wires
5. Electron scattering by optical phonons inAlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells
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1. Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires;Journal of Applied Physics;2017-09-21
2. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells;Chinese Physics B;2010-11
3. Effect of ternary mixed crystals on optical phonon modes in wurtzite nitride quantum well;Acta Physica Sinica;2010
4. Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells;Chinese Physics B;2009-09
5. Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect;The European Physical Journal B;2009-05-08
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