Thickness dependent interlayer transport in vertical MoS 2 Josephson junctions-Reference-Cited by-同舟云学术

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Thickness dependent interlayer transport in vertical MoS 2 Josephson junctions

Published:2016-07-01 Issue:3 Volume:3 Page:031002
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Island Joshua O,Steele Gary A,Zant Herre S J van der,Castellanos-Gomez Andres

Funder

Ministerie van Onderwijs, Cultuur en Wetenschap

Fundacin BBVA

Ministerio de Ciencia e Innovacin

Stichting voor Fundamenteel Onderzoek der Materie

Ministerio de Economa y Competitividad

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/3/031002/pdf

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Photocurrent generation with two-dimensional van der Waals semiconductors

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Emerging Photoluminescence in Monolayer MoS2

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-scale integration of MoS2 on high-TC superconducting YBa2Cu3O7 for the realization of Josephson devices;Applied Physics Letters;2024-08-26

2. Atomistic modeling of a superconductor–transition metal dichalcogenide–superconductor Josephson junction;Physical Review B;2023-05-26

3. Josephson Effect in NbS₂ van der Waals Junctions;The Journal of Physical Chemistry Letters;2022-11-15

4. Miniaturizing Transmon Qubits Using van der Waals Materials;Nano Letters;2021-11-18

5. Vertical Josephson field-effect transistors based on black phosphorus;Applied Physics Letters;2021-08-16

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