Multilevel resistive switching nonvolatile memory based on MoS 2 nanosheet-embedded graphene oxide
Author:
Publisher
IOP Publishing
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://iopscience.iop.org/article/10.1088/2053-1583/3/3/034002/pdf
Reference58 articles.
1. Prospective of Semiconductor Memory Devices: from Memory System to Materials
2. Emerging memories: resistive switching mechanisms and current status
3. Memristive switching mechanism for metal/oxide/metal nanodevices
4. Nanoionics-based resistive switching memories
5. Resistive switching in transition metal oxides
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