Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics-Reference-Cited by-同舟云学术

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

Published:2016-09-16 Issue:3 Volume:3 Page:035027
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Jeong Seong-Jun,Kim Hyo Won,Heo Jinseong,Lee Min-Hyun,Song Hyun Jae,Ku JiYeon,Lee Yunseong,Cho Yeonchoo,Jeon Woojin,Suh Hwansoo,Hwang Sungwoo,Park Seongjun

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/3/035027/pdf

Reference45 articles.

1. A role for graphene in silicon-based semiconductor devices

2. Graphene transistors

3. Graphene: Status and Prospects

4. A roadmap for graphene

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides;ACS Applied Electronic Materials;2024-05-24

2. Theoretical Design Strategies for Area-Selective Atomic Layer Deposition;Chemistry of Materials;2024-05-22

3. Large area MoS2 thin film growth by direct sulfurization;Scientific Reports;2023-05-24

4. Tunable Encapsulation and Doping of Monolayer MoS₂ by In Situ Probing of Excitonic Properties During Atomic Layer Deposition;Advanced Materials Interfaces;2023-04-18

5. Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics;IEEE Journal of the Electron Devices Society;2022