Abstract
Abstract
The effect of degeneracy and the impact of free-carrier screening on a low-field mobility and a high-field drift velocity in MoS2 and WS2 are explored using an in-house ensemble Monte Carlo simulator. Electron low field mobility increases to
8400
c
m
2
V
−
1
s
−
1
for MoS2 and to
12
040
c
m
2
V
−
1
s
−
1
for WS2 when temperature decreases to
77
K
and carrier concentration is around
5
×
10
12
c
m
−
2
. In the case of holes, best mobility values were
9
320
c
m
2
V
−
1
s
−
1
and
13
290
c
m
2
V
−
1
s
−
1
, reached at similar temperature and carrier concentration conditions while at room temperature these fall to
80
c
m
2
V
−
1
s
−
1
and
150
c
m
2
V
−
1
s
−
1
for MoS2 and WS2, respectively. The carrier screening effect plays a major role at low fields, and low and intermediate temperatures, where a combination of large occupancy of primary valleys and carrier–phonon interactions dominated by relatively low energy exchange processes results in an enhanced screening of intrinsic scattering. For electrons, degeneracy yields to transport in secondary valleys, which plays an important role in the decrease of the low field mobility at high concentrations and/or at room temperature. The high-field drift velocity is not much affected by carrier screening because of an increased carrier scattering with surface optical polar phonons, favouring larger phonon wavevector interactions with small dielectric function values.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
2 articles.
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