Weak localization in electric-double-layer gated few-layer graphene-Reference-Cited by-同舟云学术

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Weak localization in electric-double-layer gated few-layer graphene

Published:2017-07-05 Issue:3 Volume:4 Page:035006
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Gonnelli R S,Piatti E,Sola A,Tortello M,Dolcini F,Galasso S,Nair J R,Gerbaldi C,Cappelluti E,Bruna M,Ferrari A C

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa5afe/pdf

Reference114 articles.

1. Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric

2. Theoretical study of electrolyte gate AlGaN∕GaN field effect transistors

3. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

4. Electric-field-induced superconductivity in an insulator

5. Liquid-gated interface superconductivity on an atomically flat film

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