Abstract
Abstract
We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.
Funder
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Core Research for Evolutional Science and Technology
Ministerio de Economía y Competitividad
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
16 articles.
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