Abstract
Abstract
Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on
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t
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2
, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline
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t
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e
2
can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1–10 layers
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e
2
by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films.
Funder
Agence Nationale de la Recherche
H2020 Future and Emerging Technologies
Cited by
1 articles.
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