Ultrathin ternary semiconductor TlGaSe 2 phototransistors with broad-spectral response-Reference-Cited by-同舟云学术

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Ultrathin ternary semiconductor TlGaSe 2 phototransistors with broad-spectral response

Published:2017-08-02 Issue:3 Volume:4 Page:035021
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Yang Shengxue,Wu Minghui,Wang Hui,Cai Hui,Huang Li,Jiang Chengbao,Tongay Sefaattin

Funder

NSF DMR

Fundamental Research Funds for the Central Universities

National Natural Science Foundations of China

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa80c7/pdf

Reference42 articles.

1. Single-layer MoS2 transistors

2. Single-Layer MoS2 Phototransistors

3. Single photon emitters in exfoliated WSe2 structures

4. Broadband high photoresponse from pure monolayer graphene photodetector

5. Graphene photodetectors for high-speed optical communications

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1. Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects;Journal of Applied Physics;2024-05-22

2. The origin of anomalous mass-dependence of thermal conductivity in Janus XBAlY (X = Se, S, Te; Y = S, Se, O; X ≠ Y) monolayers;Journal of Applied Physics;2024-03-25

3. The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe₂ layered semiconductor caused by charged native defects;Semiconductor Science and Technology;2024-02-15

4. Modification of the optical and elastic properties of TlGaSe₂ layered semiconductor produced by the memory effect;Physica Scripta;2023-11-08

5. Millimeter-Sized Layered GeI₂ Single Crystals as a Promising Platform for Broadband Photodetectors;ACS Applied Electronic Materials;2023-07-20

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