Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures-Reference-Cited by-同舟云学术

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Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

Published:2017-02-17 Issue:2 Volume:4 Page:021016
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Lee Jaekwang,Huang Jingsong,Sumpter Bobby G,Yoon Mina

Funder

National Energy Research Scientific Computing Center

A U.S. Department of Energy (DOE) Office of Science user facility

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa5542/pdf

Reference57 articles.

1. Van der Waals heterostructures

2. Band Engineering for Novel Two-Dimensional Atomic Layers

3. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

4. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

5. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

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