Probing the electronic states and impurity effects in black phosphorus vertical heterostructures-Reference-Cited by-同舟云学术

Probing the electronic states and impurity effects in black phosphorus vertical heterostructures

Published:2016-03-21 Issue:1 Volume:3 Page:015012
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Chen Xiaolong,Wang Lin,Wu Yingying,Gao Heng,Wu Yabei,Qin Guanhua,Wu Zefei,Han Yu,Xu Shuigang,Han Tianyi,Ye Weiguang,Lin Jiangxiazi,Long Gen,He Yuheng,Cai Yuan,Ren Wei,Wang Ning

Funder

Shuguang Program

QiMingXing Project

National Key Basic Research Program of China

Raith-HKUST Nanotechnology Laboratory

Research Grants Council of Hong Kong

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/1/015012/pdf

Reference43 articles.

1. Black phosphorus field-effect transistors

2. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

3. Electric field effect in ultrathin black phosphorus

4. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

5. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

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