Hysteresis in the transfer characteristics of MoS 2 transistors
Author:
Funder
Regione Campania
Publisher
IOP Publishing
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://iopscience.iop.org/article/10.1088/2053-1583/aa91a7/pdf
Reference75 articles.
1. Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction
2. Two-dimensional MoS2: Properties, preparation, and applications
3. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory
4. Single-layer MoS2 transistors
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