Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe 2 channels-Reference-Cited by-同舟云学术

Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe 2 channels

Published:2017-02-17 Issue:2 Volume:4 Page:025036
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Wang Xudong,Liu Chunsen,Chen Yan,Wu Guangjian,Yan Xiao,Huang Hai,Wang Peng,Tian Bobo,Hong Zhenchen,Wang Yutao,Sun Shuo,Shen Hong,Lin Tie,Hu Weida,Tang Minghua,Zhou Peng,Wang Jianlu,Sun Jinglan,Meng Xiangjian,Chu Junhao,Li Zheng

Funder

The Major State Basic Research Development Program

National Natural Science Foundation of China

Key Research Project of Frontier Sciences of Chinese Academy of Sciences

Science and Technology Support Program of Jiangsu province

Postgraduate Innovation Project of Hunan Province

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa5c17/pdf

Reference52 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Single-layer MoS2 transistors

3. Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

4. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

5. Black phosphorus field-effect transistors

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