Stacking-dependent interlayer phonons in 3R and 2H MoS 2-Reference-Cited by-同舟云学术

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Stacking-dependent interlayer phonons in 3R and 2H MoS 2

Published:2019-02-28 Issue:2 Volume:6 Page:025022
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

van Baren Jeremiah^ORCID,Ye Gaihua,Yan Jia-An,Ye Zhipeng,Rezaie Pouyan,Yu Peng,Liu Zheng^ORCID,He Rui,Lui Chun Hung

Funder

Jess and Mildred Fisher College of Science and Mathematics

National Research Foundation Singapore

Division of Materials Research

Fisher General Endowment

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/ab0196/pdf

Reference74 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Spin and pseudospins in layered transition metal dichalcogenides

4. Probing Symmetry Properties of Few-Layer MoS2 and h-BN by Optical Second-Harmonic Generation

5. Observation of intense second harmonic generation from MoS2atomic crystals

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1. Exploration toward a new stacking-pressure phase diagram in bilayer AA- and AB-MoS2;Applied Physics Reviews;2024-09-01

2. Temperature-Dependent Low-Frequency Raman Modes in CVD-Grown Monolayer MoS₂;The Journal of Physical Chemistry C;2024-06-11

3. Vapor Deposition of Bilayer 3R MoS₂ with Room‐Temperature Ferroelectricity;Advanced Materials;2024-06-10

4. Divergent Vibrational Property Induced by an Anomalous Layer Sequence in Two-Dimensional GaPS₄;The Journal of Physical Chemistry Letters;2024-05-08

5. Highly Efficient Bulk-Crystal-Sized Exfoliation of 2D Materials under Ultrahigh Vacuum;ACS Applied Electronic Materials;2024-03-27

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