Radiation-induced defects in GaN-Reference-Cited by-同舟云学术

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Radiation-induced defects in GaN

Published:2010-11-01 Issue: Volume:T141 Page:014015
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Son N T,Hemmingsson C G,Morishita N,Ohshima T,Paskova T,Evans K R,Usui A,Isoya J,Monemar B,Janzén E

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2010/i=T141/a=014015/pdf

Reference18 articles.

1. Gallium vacancies and the yellow luminescence in GaN

2. First-principles calculations for defects and impurities: Applications to III-nitrides

3. Point-defect complexes and broadband luminescence in GaN and AlN

4. Observation of Native Ga Vacancies in GaN by Positron Annihilation

5. Direct evidence of impurity decoration of Ga vacancies inGaNfrom positron annihilation spectroscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron paramagnetic resonance of VN–VGa complex in BGaN;APL Materials;2023-10-01

2. Study of neutron irradiated structures of ammonothermal GaN;Journal of Physics D: Applied Physics;2017-02-28

3. Electronic Defects in Electron-Irradiated Silicon Carbide and III-Nitrides;Applications of EPR in Radiation Research;2014

4. Identification of the Nitrogen Split Interstitial(N−N)Nin GaN;Physical Review Letters;2012-11-16

5. A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN;Journal of Applied Physics;2012-06

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