Lifetimes for Excited Levels in Si I-Si IV-Reference-Cited by-同舟云学术

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Lifetimes for Excited Levels in Si I-Si IV

Published:1980-01-01 Issue:6 Volume:21 Page:820-824
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Bashkin S,Astner G,Mannervik S,Ramanujam P S,Scofield M,Huldt S,Martinson I

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/21/i=6/a=007/pdf

Reference47 articles.

1. Lifetime Measurements in Si II, Si III, and Si IV

2. Lifetime Measurements in Fluorine and Silicon in the Vacuum Ultraviolet

3. Radiative-lifetime measurements in Si II-Si V

4. Radiative Lifetimes of Ultraviolet Multiplets in Si, p, s, o, NE ii, and AR II

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1. Accurate and experimentally validated transition data for Si i and Si ii;Astronomy & Astrophysics;2023-10-09

2. Atomic Transition Probabilities for Transitions of Si i and Si ii and the Silicon Abundances of Several Very Metal-poor Stars ^∗;The Astrophysical Journal Supplement Series;2023-03-20

3. MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV;Astronomy & Astrophysics;2019-10-15

4. Energy levels, radiative rates and electron impact excitation rates for transitions in Si III;Atomic Data and Nuclear Data Tables;2017-09

5. Configuration-interaction plus many-body-perturbation-theory calculations of Si i transition probabilities, oscillator strengths, and lifetimes;Physical Review A;2016-02-25

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