On the aspects of GaAs initial stage band bending
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/41/i=6/a=038/pdf
Reference22 articles.
1. Kinetics study of initial stage band bending at metal GaAs(110) interfaces
2. Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems
3. Initial stages of Schottky barrier formation: Temperature effects
4. Design of an ultralow coverage metal evaporator based on a geometric factor
5. Metal cluster formation on GaAs(110): A temperature dependence study
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium;Applied Surface Science;1996-09
2. Unpinned behavior of the electronic properties of a p-GaAs(Cs,O) surface at room temperature;Surface Science;1995-07
3. Domination of adatom-induced over defect-induced surface states onp-type GaAs(Cs,O) at room temperature;Physical Review B;1994-08-15
4. Band bending at low-temperature metal/III–V semiconductor interfaces: The overshoot phenomenon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
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