Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2films prepared on Si substrates-Reference-Cited by-同舟云学术

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Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2films prepared on Si substrates

Published:2006-03-17 Issue: Volume:T123 Page:148-151
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Rosiński J M,Wołowski J,Badziak J,Boody F P,Gammino S,Krása J,Láska L,Mezzasalma A,Parys P,Pfeifer M,Rohlena K,Torrisi L,Ullschmied J

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2006/i=T123/a=023/pdf

Reference19 articles.

1. Laser-driven ion source for reduced-cost implantation of metal ions for strong reduction of dry friction and increased durability

2. Laser produced Ag ions for direct implantation

3. Laser induced direct implantation of ions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on developments in LIS (laser ion source) at the IPPLM and its possible applications in photonics;Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013;2013-10-25

2. Laser generated Ge ions accelerated by additional electrostatic field for implantation technology;Applied Surface Science;2013-05

3. Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO2 substrates;Review of Scientific Instruments;2012-02

4. Method of ions acceleration for laser-induced implantation of semiconductor materials;Radiation Effects and Defects in Solids;2008-06

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