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Organic thin film transistors with indium tin oxide bottom electrode

Published:2006-08-17 Issue: Volume:T126 Page:41-44
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Han Chang-Wook,Shin Hee-Sun,Park Joong-Hyun,Han Min-Koo,Pang Hee-Suk,Kim Ki-Yong,Chung In-Jae,Pyo Sang-Woo,Lee Dong-Hyun,Kim Young-Kwan

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2006/i=T126/a=009/pdf

Reference9 articles.

1. Organic Thin Film Transistors for Large Area Electronics

2. Temperature-independent transport in high-mobility pentacene transistors

3. Tunneling at Organic/Metal Interfaces in Oligomer-Based Thin-Film Transistors

4. Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser-driven high-resolution patterning of indium tin oxide thin film for electronic device;Optics and Lasers in Engineering;2010-07

2. Structural, optical and electrical characteristics of transparent bismuth vanadate films deposited on indium tin oxide coated glass substrates;Journal of Materials Science: Materials in Electronics;2009-12-01

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