Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors
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Published:2006-08-17
Issue:
Volume:T126
Page:97-100
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ISSN:0031-8949
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Container-title:Physica Scripta
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language:
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Short-container-title:Phys. Scr.
Author:
Radamson H H,Hållstedt J,Isheden C,Östling M
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics