A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical Computations
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/24/i=2/a=023/pdf
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1. Computer simulations of Schottky contacts with a non-constant recombination velocity;Solid-State Electronics;1989-05
2. On the temperature dependence of the Mott–Schottky characteristics of high‐barrier Ti–p‐Si metal‐insulator‐semiconductor diodes;Journal of Applied Physics;1987-03-15
3. Large barrier tunnel metal-insulator-semiconductor structures;Semiconductor Science and Technology;1987-02-01
4. Formation and characterization of metal-semiconductor junctions;Vacuum;1986-10
5. Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n+) diodes;IEEE Transactions on Electron Devices;1986-04
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