Modelling of Semiconductor Structures and Devices
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/24/i=2/a=022/pdf
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1. Accurate algorithm for temperature calculation of devices in nonlinear-circuit-analysis programs
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrons in MIS Inversion and Accumulation Layers. Exchange and Correlation Effects within a Modified Thomas-Fermi Theory;physica status solidi (b);1988-07-01
2. Electric field versus band bending in MIS structures: Quantum interpolation formula for device modeling;physica status solidi (a);1986-09-16
3. Self-Consistent Theory of the Electronic Structure of Inversion Layers. I. A New Method Using the Modified Local Density Approximation;physica status solidi (b);1985-07-01
4. Alternative Quasi-Classical Transport Equations. I. General Formalism for the Inclusion of Wave Functions;physica status solidi (b);1985-01-01
5. Approximate Calculation Schemes for Inversion Layers and Multi-Layer Structures;Physics of Solid Surfaces 1984;1985
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