Improvement of the Short Circuit Immunity for the Trench IGBT Employing the Curved P-body Junction and the Wide Cell Pitch-Reference-Cited by-同舟云学术

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Improvement of the Short Circuit Immunity for the Trench IGBT Employing the Curved P-body Junction and the Wide Cell Pitch

Published:2004-01-01 Issue: Volume:T114 Page:73-76
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Kim Soo-Seong,Ha Min-Woo,Choi Yearn-Ik,Han Min-Koo

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2004/i=T114/a=017/pdf

Reference8 articles.

1. Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress

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1. A Novel Silicon Carbide Insulated Gate Bipolar Transistor with Short Super Junction;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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