Mechanical properties of RF-sputtering MoS2thin films-Reference-Cited by-同舟云学术

Mechanical properties of RF-sputtering MoS2thin films

Published:2017-06-12 Issue:2 Volume:5 Page:025003
ISSN:2051-672X
Container-title:Surface Topography: Metrology and Properties
language:
Short-container-title:Surf. Topogr.: Metrol. Prop.

Author:

Ramos Manuel,Nogan John,Ortíz-Díaz Manuela,Enriquez-Carrejo Jose L,Rodriguez-González Claudia A,Mireles-Jr-Garcia Jose,Ornelas Carlos,Hurtado-Macias Abel

Funder

Universidad Autónoma de Cd. Juárez

Sandia National Laboratories

Publisher

IOP Publishing

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation

Link

http://stacks.iop.org/2051-672X/5/i=2/a=025003/pdf

Reference20 articles.

1. Single-layer MoS2 transistors

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides

4. Molybdenum and Niobium Sulphides

5. Transition states energies for catalytic hydrodesulfurization reaction in Co9S8/MoS2 theoretical interface using computer-assisted simulations

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