Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Compact Analytical Threshold-Voltage Model of Nanoscale Fully Depleted Strained-Si on Silicon–Germanium-on-Insu lator (SGOI) MOSFETs
2. Hole and electron transport in strained Si: Orthorhombic versus biaxial tensile strain
3. A quantum dense coding implementation in an ion trap
4. Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Percolation network formation in poly(4-vinylpyridine)/aluminum nitride nanocomposites: Rheological, dielectric, and thermal investigations;Polymer Composites;2013-12-13
2. Investigations of high-pressure and high-temperature behaviors of the newly-discovered willemite-II and post-phenacite silicon nitrides;Chinese Physics B;2013-12
3. Electrical Characteristics of High Mobility Si/Si 0.5 Ge 0.5 /SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm;Chinese Physics Letters;2013-10
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