Author:
Yang Yumu,Wu Qilong,Deng Jiaqi,Wang Jing,Xia Yu,Fu Xiaoshuai,Tian Qiwei,Zhang Li,Yin Long-Jing,Tian Yuan,Xie Sheng-Yi,Zhang Lijie,Qin Zhihui
Abstract
Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics. However, a layered two-dimensional form of these materials has been rarely reported. Here, we realize semiconducting Cu2Se by direct selenization of Cu(111). Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure. X-ray photoelectron spectroscopy data reveal chemical composition of the sample, which is Cu2Se. The observed moiré pattern indicates a lattice mismatch between Cu2Se and the underlying Cu(111)-
3
×
3
surface. Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu2Se exhibits a band gap of 0.78 eV. Furthermore, the calculated density of states and band structure demonstrate that the isolated Cu2Se is a semiconductor with an indirect band gap of ∼ 0.8 eV, which agrees quite well with the experimental results. Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.
Subject
General Physics and Astronomy
Cited by
3 articles.
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