High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/1/017805/pdf
Reference21 articles.
1. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
2. 2.3 [micro sign]m type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4 W
3. Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers
4. Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing
5. Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 [micro sign]m wavelength range around room temperature
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1. Investigation of temperature distribution and 2.79 μm laser performance on the Er:YSGG single crystal fiber;Optics Communications;2022-01
2. Mid- and long-infrared emission properties of InxGa1−xAsySb1−y quaternary alloy with Type-II InAs/GaSb superlattice distribution;Journal of Alloys and Compounds;2020-12
3. Investigation of localized state emissions in quaternary InGaAsSb/AlGaAsSb multiple quantum wells grown by molecular beam epitaxy;Optical Materials Express;2020-11-23
4. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy;Chinese Physics B;2019-03
5. A simple approach to obtain 2.0 mu m GaSb laser by using high-order distributed Bragg reflector;J INFRARED MILLIM W;2018
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