Visualization of tunnel magnetoresistance effect in single manganite nanowires*

Abstract

We reported a study of tunnel magnetoresistance (TMR) effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging. TMR value up to 290% has been observed in single (La1 − y Pr y )1 − x Ca x MnO3 nanowires with varying width. We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions. Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.