Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
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1. Narrow band gap high conducting nc-Si1-xGex:H absorber layers for tandem structure nc-Si solar cells;Journal of Alloys and Compounds;2019-10
2. Optimization in the nanostructural evolution of hydrogenated silicon germanium thin film in RF-PECVD;Physica E: Low-dimensional Systems and Nanostructures;2019-07
3. Non-uniform distribution in µc-Si1−xGex:H and its influence on thin film and device performance;Solar Energy Materials and Solar Cells;2016-07
4. Numerical simulation of a triple-junction thin-film solar cell based on μc-Si1−xGex:H;Chinese Physics B;2013-09
5. Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell;Solar Energy Materials and Solar Cells;2013-07
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