Author:
Wang 王 Zhengguo 政国,Yao 姚 Weiliang 伟良,Wang 王 Yudi 宇迪,Xin 信 Ziming 子鸣,Han 韩 Tingting 婷婷,Chen 陈 Lei 磊,Ou 欧 Yi 仪,Zhu 朱 Yu 玉,Cai 蔡 Cong 淙,Li 李 Yuan 源,Zhang 张 Yan 焱
Abstract
Realizing phase transitions via non-thermal sample manipulations is important not only for applications, but also for uncovering the underlying physics. Here, we report on the discovery of two distinct metal–insulator transitions in 1T-TaS2 via angle-resolved photoemission spectroscopy and in-situ rubidium deposition. At 205 K, the rubidium deposition drives a normal metal–insulator transition via filling electrons into the conduction band. While at 225 K, however, the rubidium deposition drives a bandwidth-controlled Mott transition as characterized by a rapid collapsing of Mott gap and a loss of spectral weight of the lower Hubbard band. Our result, from a doping-controlled perspective, succeeds in distinguishing the metallic, band-insulating, and Mott-insulating phases of 1T-TaS2, manifesting a delicate balance among the electron-itineracy, interlayer-coupling and Coulomb repulsion. We also establish an effective method to tune the balance between these interactions, which is useful in seeking exotic electronic phases and designing functional phase-changing devices.
Subject
General Physics and Astronomy