Author:
Huang Zhaocong,Liu Wenqing,Liang Jian,Guo Qingjie,Zhai Ya,Xu Yongbing
Abstract
Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.
Subject
General Physics and Astronomy
Cited by
3 articles.
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