F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/11/117306/pdf
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1. Organic Heterostructures with Dendrimer Based Mixed Layer for Electronic Applications;Molecules;2024-09-01
2. Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode;Journal of Electronic Materials;2017-01-31
3. Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances;Applied Physics A;2016-10-21
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