Experimental clarification of orientation dependence of germanium PMOSFETs with Al 2 O 3 /GeO x /Ge gate stack-Reference-Cited by-同舟云学术

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Experimental clarification of orientation dependence of germanium PMOSFETs with Al 2 O 3 /GeO x /Ge gate stack

Published:2014-11 Issue:11 Volume:23 Page:118506
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Yun Quan-Xin,Li Ming,An Xia,Lin Meng,Liu Peng-Qiang,Li Zhi-Qiang,Zhang Bing-Xin,Xia Yu-Xuan,Zhang Hao,Zhang Xing,Huang Ru,Wang Yang-Yuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/23/11/118506/pdf

Reference15 articles.

1. EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection

2. A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation

3. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing;Chinese Physics B;2022-08-01

2. Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience;IOP Conference Series: Materials Science and Engineering;2017-05

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